| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of stably lowering a threshold current, and a manufacturing method of a semiconductor laser element.SOLUTION: A semiconductor laser element 1 includes a substrate having a first main surface 2a tilted in an m-axis direction with respect to a c plane, and a semiconductor layer 3 formed by epitaxial growth on the first main surface 2A. The semiconductor layer 3 includes an active layer 31 that is a layer emitting light by the recombination of electrons and positive hoes. Cut surfaces 3A, 3B are formed so as to include resonance surfaces 31B, 31C of the active layer 31 at each of a pair of end portions in a c-axis projection direction that is a direction where a c axis of a hexagonal Group-III nitride constituting the substrate 2 extends when the c axis is projected on the first main surface 2A. A step part group 2C including a plurality of step parts 2D is formed in a region including the substrate 2 in the cut surfaces 3A, 3B. An average value of intervals between the step parts 2D adjacent to each other in the step part group 2C is 3 μm or more.SELECTED DRAWING: Figure 4 |
