发明名称 METHOD FOR MANUFACTURING RESIST PATTERN AND RESIST PATTERN OBTAINED FROM THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a resist pattern capable of further improving CD uniformity and mask error factor.SOLUTION: The method for manufacturing a resist pattern includes: a step of forming a resist film by applying a resist composition containing a resin (A) which becomes alkali-soluble by the action of an acid and an acid generator (B) onto a substrate; a step of prebaking (PB) the resist film at a temperature T; a step of exposing the prebaked resist film; a step of subjecting the exposed resist film to post exposure bake (PEB) at a temperature T; and a step of obtaining a resist pattern by developing the resist film subjected to the post exposure bake with an alkali developer, wherein the expressions: 85°C<T, T<Tand T<100°C are satisfied.
申请公布号 JP2011007966(A) 申请公布日期 2011.01.13
申请号 JP20090150363 申请日期 2009.06.24
申请人 SUMITOMO CHEMICAL CO LTD 发明人 ICHIKAWA KOJI;HIRAOKA TAKASHI;MIYAGAWA TAKAYUKI
分类号 G03F7/38;C08F220/10;G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/38
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