THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin-film transistor for surely preventing fluctuation of oxygen content in a semiconductor layer comprising oxide and characteristic fluctuation due to moisture adsorption, along with its manufacturing method.SOLUTION: The thin-film transistor includes an oxide semiconductor layer 7 comprising oxide which is provided on a substrate 1, and an upper layer insulating film 9 which is formed continuously from the oxide semiconductor layer 7, on the oxide semiconductor layer 7. The outer peripheral edges of the oxide semiconductor layer 7 and the upper layer insulating film 9 are arranged to keep intervals d1-d4 of 13 μm or more from a channel region 7ch formed in the oxide semiconductor layer 7. By this configuration, the effect of moisture adsorption and entrance/leaving of oxygen from the outside of outer peripheral edge is prevented from affecting the channel region 7ch.