发明名称 |
RECORDING METHOD OF NONVOLATILE MEMORY, AND NONVOLATILE MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To achieve long life and highly reliable recording by suppressing destruction of an information memory element or shortage of the life caused by the recording, in a nonvolatile memory for recording a resistance change as information.SOLUTION: The recording method of the nonvolatile memory includes a recording circuit which electrically performs recording of information for the information memory element having a resistance change. In the recording circuit, the information in a the low-resistance state is recorded in a state where an output impedance of the recording circuit for the information memory element is larger than a resistance value in the low-resistance state of the information memory element, and also in the recording circuit, the information in a high-resistance state is recorded in a state where an output impedance of the recording circuit for the information memory element is smaller than a resistance value in the high-resistance state of the information memory element. |
申请公布号 |
JP2011008860(A) |
申请公布日期 |
2011.01.13 |
申请号 |
JP20090151514 |
申请日期 |
2009.06.25 |
申请人 |
SONY CORP |
发明人 |
OMORI HIROYUKI;YAMAMOTO TETSUYA;HOSOMI MASAKATSU;HIGO YUTAKA;YAMANE KAZUAKI;BESSHO KAZUHIRO;KANO HIROSHI;IGARASHI MINORU;OISHI TAKENORI;KUSUNOKI SHINICHIRO |
分类号 |
G11C11/15;G11C13/00;H01L21/8246;H01L27/10;H01L27/105;H01L43/08 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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