发明名称 RECORDING METHOD OF NONVOLATILE MEMORY, AND NONVOLATILE MEMORY
摘要 PROBLEM TO BE SOLVED: To achieve long life and highly reliable recording by suppressing destruction of an information memory element or shortage of the life caused by the recording, in a nonvolatile memory for recording a resistance change as information.SOLUTION: The recording method of the nonvolatile memory includes a recording circuit which electrically performs recording of information for the information memory element having a resistance change. In the recording circuit, the information in a the low-resistance state is recorded in a state where an output impedance of the recording circuit for the information memory element is larger than a resistance value in the low-resistance state of the information memory element, and also in the recording circuit, the information in a high-resistance state is recorded in a state where an output impedance of the recording circuit for the information memory element is smaller than a resistance value in the high-resistance state of the information memory element.
申请公布号 JP2011008860(A) 申请公布日期 2011.01.13
申请号 JP20090151514 申请日期 2009.06.25
申请人 SONY CORP 发明人 OMORI HIROYUKI;YAMAMOTO TETSUYA;HOSOMI MASAKATSU;HIGO YUTAKA;YAMANE KAZUAKI;BESSHO KAZUHIRO;KANO HIROSHI;IGARASHI MINORU;OISHI TAKENORI;KUSUNOKI SHINICHIRO
分类号 G11C11/15;G11C13/00;H01L21/8246;H01L27/10;H01L27/105;H01L43/08 主分类号 G11C11/15
代理机构 代理人
主权项
地址