发明名称 |
FIELD EFFECT TRANSISTOR HAVING CHANNEL SILICON GERMANIUM |
摘要 |
Field effect transistors and methods of making field effect transistors are provided. The field effect transistor can contain a semiconductor substrate containing shallow trench isolations; a silicon germanium layer in a trench at an upper surface of the semiconductor substrate between the shallow trench isolations; a gate feature on the silicon germanium layer; and metal silicides on the upper potions of silicon germanium layer and semiconductor substrate that are not covered by the gate feature. The silicon germanium layer has a bottom surface and a top surface having a (100) plane and side surfaces having two or more planes.
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申请公布号 |
US2011006349(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20090501718 |
申请日期 |
2009.07.13 |
申请人 |
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.;CHARTERED SEMICONDUCTOR MANUFACTURING, LTD |
发明人 |
OTA HIROYUKI;SIH VINCENT |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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