| 摘要 |
<p>A contact-hole forming method is provided with a process (a) for forming an insulation film on a substrate, and a process (b) for forming contact holes by etching the insulation film. Process (a) comprises a process (a1) that places the substrate in between a pair of electrodes; a process (a2) that supplies a first reactant gas in between the pair of electrodes into which the substrate was placed in process (a1); a process (a3) that raises, after process (a2), the RF output to be supplied in between the pair of electrodes, to a predetermined prescribed value, and generates plasma; and a process (a4) that supplies, after process (a3), a second reactant gas that forms the insulation film.</p> |
