发明名称 |
NOVEL HIGH SPEED HIGH DENSITY NAND-BASED 2T-NOR FLASH MEMORY DESIGN |
摘要 |
<p>A two transistor NOR flash memory cell has symmetrical source and drain structure manufactured by a NAND-based manufacturing process. The flash cell comprises a storage transistor made of a double-poly NMOS floating gate transistor and an access transistor made of a double -poly NMOS floating gate transistor, a poly1 NMOS transistor with polyl and poly2 being shorted or a single-poly poly1 or poly2 NMOS transistor. The flash cell is programmed and erased by using a Fowler-Nordheim channel tunneling scheme. A NAND-based flash memory device includes an array of the flash cells arranged with parallel bit lines and source lines that are perpendicular to word lines. Write-row-decoder and read-row-decoder are designed for the flash memory device to provide appropriate voltages for the flash memory array in pre-program with verify, erase with verify, program and read operations in the unit of page, block, sector or chip.</p> |
申请公布号 |
WO2011005665(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
WO2010US40854 |
申请日期 |
2010.07.02 |
申请人 |
APLUS FLASH TECHNOLOGY, INC.;LEE, PETER, WUNG;HSU, FU-CHANG |
发明人 |
LEE, PETER, WUNG;HSU, FU-CHANG |
分类号 |
G06F12/00 |
主分类号 |
G06F12/00 |
代理机构 |
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