发明名称 |
STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES |
摘要 |
A structure for improving the mirror facet cleaving yield of (Ga,Al,In,B)N laser diodes grown on nonpolar or semipolar (Ga,Al,In,B)N substrates. The structure comprises a nonpolar or semipolar (Ga,Al,In,B)N laser diode including a waveguide core that provides sufficient optical confinement for the device's operation in the absence of p-type doped aluminum-containing waveguide cladding layers, and one of more n-type doped aluminum-containing layers that can be used to assist with facet cleaving along a particular crystallographic plane.
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申请公布号 |
US2011007766(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20100833607 |
申请日期 |
2010.07.09 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
FARRELL ROBERT M.;HARDY MATTHEW T.;OHTA HIROAKI;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |
分类号 |
H01S5/343;H01L33/04;H01L33/30;H01S5/34 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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