发明名称 |
GALLIUM NITRIDE FOR LIQUID CRYSTAL ELECTRODES |
摘要 |
<p>Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium flouride buffer layer),and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer),and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure.</p> |
申请公布号 |
WO2011005444(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
WO2010US38992 |
申请日期 |
2010.06.17 |
申请人 |
RAYTHEON COMPANY;RESLER, DANIEL, P.;HOKE, WILLIAM, E. |
发明人 |
RESLER, DANIEL, P.;HOKE, WILLIAM, E. |
分类号 |
G02F1/1343;H01L21/335;H01L29/778 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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