METAL OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A metal oxide semiconductor thin film transistor and a method for manufacturing the same are provided to simplify manufacturing processes by forming a source electrode, a drain electrode, and an active layer on the same plane using the same material. CONSTITUTION: A gate electrode(110) and a gate insulating layer(120) are formed on a substrate(100). A metal oxide semiconductor film(131) is formed on the gate insulating layer. The metal oxide semiconductor film is manufactured through a chemical vapor deposition method, a physical vapor deposition method and a sputtering method. A transparent conductive electrode region(140) is formed on the inner side of the metal oxide semiconductor film by implanting conductive ions. A part of the metal oxide semiconductor film is patterned, and an active layer(130), a source electrode and a drain electrode are formed.