发明名称 REFERENCE VOLTAGE GENERATION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To perform low power supply voltage operation ≤1 V and low current operation not more than dozens of nA, and to obtain a reference voltage not depending on a temperature with a small circuit scale.SOLUTION: The reference voltage generation circuit includes: a first current mirror circuit formed by two P-type FETs M1, M2 having different threshold voltages; and a second current mirror circuit formed by two N-type FETs M3, M4 having different threshold voltages. In the first current mirror circuit, a gate and a drain of M1 having a larger absolute value of the threshold voltage are short-circuited to perform diode connection, wherein M1 is operated in a sub threshold area, and dimension W/L of M1 is selected to about ten times the M2 such that M2 having a smaller absolute value of the threshold voltage is operated in a saturated operation area. In the second current mirror circuit, the N-type FET having the larger threshold voltage is operated in a sub threshold area, and dimension W/L of M3 is selected to about ten times the M4 such that M4 having the low threshold voltage is operated in a saturated operation area. In the reference voltage generation circuit, output ends of two current mirrors are connected to form a closed circuit, and a gate voltage generated in M4 is used as the reference voltage.
申请公布号 JP2011008438(A) 申请公布日期 2011.01.13
申请号 JP20090150240 申请日期 2009.06.24
申请人 ANDO HAJIME 发明人 ANDO HAJIME
分类号 G05F3/24;H03F3/347 主分类号 G05F3/24
代理机构 代理人
主权项
地址
您可能感兴趣的专利