摘要 |
<p>Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device.</p> |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;KIM, YOUNG-HEE;VLASOV, YURII;GREEN, WILLIAM, MICHAEL;ASSEFA, SOLOMON;VAN CAMPENHOUT, JORIS |
发明人 |
KIM, YOUNG-HEE;VLASOV, YURII;GREEN, WILLIAM, MICHAEL;ASSEFA, SOLOMON;VAN CAMPENHOUT, JORIS |