发明名称 |
System and method for forming an integrated barrier layer |
摘要 |
An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode deposition process comprising a chemical vapor deposition (CVD) step and a cyclical deposition step. The dual-mode deposition process may be performed in a single process chamber.
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申请公布号 |
US7867914(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20070770735 |
申请日期 |
2007.06.29 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
XI MING;YANG MICHAEL;ZHANG HUI |
分类号 |
H01L21/44;H01L21/02;H01L21/285;H01L21/469;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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