| 摘要 |
PURPOSE: A semiconductor device contact forming method is provided to decrease contact defects by applying a unit contact having a large size relative to a wide area. CONSTITUTION: First conductive patterns located in different layers are overlapped as a normal area that is smaller than a certain area. A first contact is formed between the first conductive patterns with a first unit contact(34) having the first area as the normal area. The second conductive patterns located on the same layer with the first conductive patterns are overlapped in a wide area that is larger than the certain area.
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