发明名称 |
On-die termination circuit, method of controlling the same, and ODT synchronous buffer |
摘要 |
An on-die termination (ODT) circuit may include an ODT synchronous buffer and/or an ODT gate. The ODT synchronous buffer may be configured to generate a synchronous ODT command from an external ODT command in synchronization with a first clock signal delay-locked to an external clock signal. The ODT gate may be configured to generate signals for controlling ODT based on a second clock signal delay-locked to the external clock signal and the synchronous ODT command. The synchronous ODT command may be generated in a disabled period of the second clock signal.
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申请公布号 |
US7868648(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20080071848 |
申请日期 |
2008.02.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DONG-JIN;CHO JIN-HYUNG |
分类号 |
H03K17/16;H03K19/003 |
主分类号 |
H03K17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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