发明名称 On-die termination circuit, method of controlling the same, and ODT synchronous buffer
摘要 An on-die termination (ODT) circuit may include an ODT synchronous buffer and/or an ODT gate. The ODT synchronous buffer may be configured to generate a synchronous ODT command from an external ODT command in synchronization with a first clock signal delay-locked to an external clock signal. The ODT gate may be configured to generate signals for controlling ODT based on a second clock signal delay-locked to the external clock signal and the synchronous ODT command. The synchronous ODT command may be generated in a disabled period of the second clock signal.
申请公布号 US7868648(B2) 申请公布日期 2011.01.11
申请号 US20080071848 申请日期 2008.02.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE DONG-JIN;CHO JIN-HYUNG
分类号 H03K17/16;H03K19/003 主分类号 H03K17/16
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