发明名称 |
Methods of forming a contact structure |
摘要 |
In a method of forming a contact structure, a first insulation layer including a first contact hole is formed on a substrate. A metal layer including tungsten is formed to fill the first contact hole. A planarization process is performed on the metal layer until the first insulation layer is exposed to form a first contact. A second contact is grown from the first contact. The second contact is formed without performing a photolithography process and an etching process to prevent misalignments.
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申请公布号 |
US7867902(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20090499832 |
申请日期 |
2009.07.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI SUK-HUN;HONG CHANG-KI;SIM HYUN-JUN;SON YOON-HO |
分类号 |
H01L21/44;H01L21/311;H01L21/4763 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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