METHOD FOR MANUFACTURING SELF-ALIGNED THIN-FILM TRANSISTOR AND STRUCTURE THEREOF

摘要

PURPOSE: A self-aligning thin film transistor and a manufacturing method thereof are provided to improve the contrast ratio of LCD by forming the oxide gate having the high transmittance in the bandwidth of visible light. CONSTITUTION: A transparent substrate(210) equipped with a first surface(211) and a second surface(212) opposing each other is arranged. The oxide gate(220) is deposited on the first surface of the transparent substrate. A dielectric layer(230) is deposited on the oxide gate of the transparent substrate and the first surface.