PHASE CHANGE MEMORY CELL WITH SELF-ALIGNED VERTICAL HEATER AND LOW RESISTIVITY INTERFACE

摘要

PURPOSE: A phase-change memory cell having a self alignment vertical heater and a resistance interface is provided to improve the ability to record and read the phase-change material by reducing the resistance in the interface between the silicide contact area and the heater component. CONSTITUTION: A contact area(26) is formed on a selection device. An interface layer(44) is formed on the contact area. A vertical heater element(50) is formed on the interface layer. The phase change material(60) is formed on the vertical heater element. The phase change material comprises the chalcogenide.