发明名称 |
METHOD OF PROGRAM VERIFY OF NONVOLATILE MEMORY DEVICE USING THE PAGE BUFFER |
摘要 |
PURPOSE: A method for verifying programs using the page buffer of a nonvolatile memory device is provided to reduce the amount of current consumption by skipping the pre-charge operation of bit-line in connection with a program-inhibited cell. CONSTITUTION: Program data, which is the same as data programmed in a selection memory cell, is stored in a pager buffer(310). The electric potential of a sensing node is controlled according to the program data(320). The electric potential of the sensing node is varied according to the program state of the memory cell. The electric potential of the sensor node is sensed(340) A program verification operation with respect to the memory cell is implemented.
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申请公布号 |
KR20110001057(A) |
申请公布日期 |
2011.01.06 |
申请号 |
KR20090058448 |
申请日期 |
2009.06.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LIM, KYU HEE;PARK, SEONG JE |
分类号 |
G11C16/34;G11C16/10;G11C16/24;G11C16/26 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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