METHOD FOR PRODUCING SINGLE CRYSTAL SILICON CARBIDE NANOTUBE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing single crystal silicon carbide nanotubes which are excellent in electric characteristics and mechanical characteristics and where tube structures do not collapse by electron beam irradiation.SOLUTION: Polycrystal silicon carbide nanotubes are produced and then the single crystal silicon carbide nanotubes are produced by irradiating the polycrystal silicon carbide nanotubes with ions accelerated by larger energy than the energy necessary for penetrating them. For example, the ions are irradiated at an irradiating temperature of 900°C or higher and the amount of irradiated ions is 5 dpa or more as a repelled out amount.