发明名称 METHOD FOR DETECTING DEFECT OF REPAIR FUSE IN SEMICONDUCTOR DEVICE
摘要 PURPOSE: A repair fuse defect detecting method is provided to improve repair fuse defect detection efficiency and to easily detect a repair fuse defect due to a marginal defect. CONSTITUTION: Both ends of a fuse are connected to the drain of the first and the second transistor. A power supply part and a grounding part are connected to the source of the first and the second transistor. The first transistor comprises a p-MOS transistor. The second transistor comprises an n-MOS transistor.
申请公布号 KR20110001596(A) 申请公布日期 2011.01.06
申请号 KR20090059177 申请日期 2009.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, WON HEE
分类号 H01L23/62;H01L21/66;H01L21/82 主分类号 H01L23/62
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