发明名称 WIRING STRUCTURE AND METHOD OF FORMING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a high-quality wiring structure and a method for manufacturing the structure.SOLUTION: The wiring structure has a first wiring layer having a first conductive material and a first insulating layer, and a second wiring layer on the first insulating layer. The second wiring layer has a second insulating layer and an opening portion having a via and a trench. The opening portion has a second conductive material and two or more barrier layers between the second conductive material and the second insulating layer. The second conductive material is electrically connected to the first conductive material. The two or more barrier layers have a region where the second insulating layer in the opening portion contacts the first barrier layer and the first barrier layer contacts an MnO-containing barrier layer, and a region where the second insulating layer contacts the MnO-containing barrier layer.
申请公布号 JP2011003881(A) 申请公布日期 2011.01.06
申请号 JP20100023327 申请日期 2010.02.04
申请人 TOSHIBA CORP 发明人 ISOBAYASHI ATSUNOBU
分类号 H01L21/768;C23C14/08;C23C14/58;H01L21/3205;H01L23/52;H01L23/522 主分类号 H01L21/768
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