发明名称 |
THIN FILM OF METAL-SILICON COMPOUND AND PROCESS FOR PRODUCING THE THIN FILM OF THE METAL-SILICON COMPOUND |
摘要 |
An object of the present invention is to provide a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound has, as a unit structure, a transition metal-containing silicon cluster in which an energy gap EHL between highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) is wide. The present invention relates to a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound is a compound of a transition metal and silicon, and has a transition metal-containing silicon cluster as a unit structure, the transition metal-containing silicon cluster having a structure in which a transition metal atom is surrounded by seven to sixteen silicon atoms, two of which are first and second neighbor atoms to the transition metal atom.
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申请公布号 |
US2011002833(A1) |
申请公布日期 |
2011.01.06 |
申请号 |
US20090919443 |
申请日期 |
2009.02.25 |
申请人 |
KANAYAMA TOSHIHIKO;UCHIDA NORIYUKI |
发明人 |
KANAYAMA TOSHIHIKO;UCHIDA NORIYUKI |
分类号 |
C01B33/06;B05D3/10;B29C35/08 |
主分类号 |
C01B33/06 |
代理机构 |
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地址 |
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