| 摘要 |
PROBLEM TO BE SOLVED: To suppress degradation of element characteristics which is caused by a defect present in a semiconductor substrate, relating to a semiconductor device.SOLUTION: A silicon carbide semiconductor device includes a semiconductor substrate 101, an epitaxial layer 102 formed on the surface of the semiconductor substrate 101, a gate insulating film 111 formed on the epitaxial layer 102, and a gate electrode 113 which is insulated from the epitaxial layer 102 by the gate insulating film 111. A defect propagation suppressing layer 116 whose defect density is lower than well region is provided between a well region 105 and a channel layer 115. By converting the substrate surface transition from the semiconductor substrate 101 to a blade-like transition by using the defect propagation suppressing layer 116, the defect density in the channel layer 115 directly under the gate insulating film 111 comes to be 50% or less of the defect density of the well region 105. |
