NON-VOLATILE MEMORY DEVICE HAVING PHASE-CHANGE MATERIAL

摘要

PURPOSE: A nonvolatile memory device is provided to prevent the formation of a void due to the oxidation of a phase change material layer and etching non-uniformity by forming a phase change material layer into a multilayer before and after a node separation process. CONSTITUTION: A first phase change material layer(150) is formed on a lower electrode(130). A gate structure(110) is formed on a substrate(100). The gate structure comprises a gate isolation layer(102) and a gate electrode layer(104). A second phase change material layer(170) is located to be electrically connected to the first phase change material layer. An upper electrode(180) is located on the second phase change material layer in order to be electrically connected to.