| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the capacitance of a capacitor by increasing the area of an effective storage node. CONSTITUTION: A first sacrificial layer is formed on a substrate with a first storage node contact(SNC1). A second storage node contact connected the first storage node contact is formed by passing through the first sacrificial layer. A second sacrificial layer is formed on the first sacrificial layer including the second storage node contact. A storage node hole(21) is formed on the second sacrificial layer to expose the second storage node contact. A storage node is formed on the storage node hole. The first and second sacrificial layers are removed.
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