发明名称 3-DIMENSION NANO STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A method for manufacturing a 3-dimensional nanostructure is provided to secure an infiltration area of electrolyte and to directly form an electrode active material on a current collector through electroless plating and sulfurization. CONSTITUTION: A method for manufacturing a 3-dimensional nanostructure comprises the steps of: etching the upper part of a current collector(110) in a nanostructure shape; forming a metal layer on the etched current collector; and forming a metal compound layer(130) on the current collector on which the metal layer is formed. The second step uses at least one of electroless plating, electrolytic plating method, sputtering and vacuum deposition.
申请公布号 KR20110001845(A) 申请公布日期 2011.01.06
申请号 KR20090107198 申请日期 2009.11.06
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY 发明人 CHOI, YOUNG JIN;AHN, HYO JUN;HA, JIN HO;AHN, JOU HYEON;CHO, KWON KOO;CHO, GYU BONG;KIM, KI WON;NAM, TAE HYEON
分类号 B82B3/00;H01M4/64;B82B1/00;H01M4/04;H01M4/26 主分类号 B82B3/00
代理机构 代理人
主权项
地址