| 摘要 |
PROBLEM TO BE SOLVED: To invert a word line voltage at high speed by a word driver.SOLUTION: The semiconductor integrated circuit includes a nonvolatile memory (4) which has drain and source electrodes connected to a bit line and a source line, respectively. The memory has a gate electrode coupled to a word line, stores information by a difference of a threshold voltage from a word line selection level in reading, and has a nonvolatile memory cell transistor in a well region. The memory includes a word driver (32) that selectively drives the word line according to an operation mode at a ground voltage or a positive/negative voltage with respect thereto. The word driver includes a CMOS inverter between a first terminal to be supplied with a positive voltage and a second terminal to be supplied with a negative voltage, and an n-channel MOS transistor which is connected in parallel with a p-channel MOS transistor of the CMOS inverter, in an output stage. When the word line, which is selected for reading from non-selection of reading in read mode, is charged to the ground voltage from the negative voltage, the voltage of the first terminal is boosted to the positive voltage while the word line voltage falls within the ground voltage from the negative voltage. |
