CONTROLLING PIT FORMATION IN A III-NITRIDE DEVICE

摘要

A device includes a semiconductor structure comprising a Ill-nitride light emitting layer (26) disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer (20a, 20b, 20c) and pit-filling layer (22a, 22b, 22c) in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.