THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME
摘要
<p>Provided is a thin film transistor having a gate insulation film for controlling the amount of shift in the threshold voltage generated by use under a high-temperature environment. A thin-film transistor wherein the channel layer is formed from microcrystalline silicon has a gate insulation film (140) that is obtained by lamination of a first silicon nitride film (141) having a nitrogen content that is 6×1021 atoms/cc or less and a second silicon nitride film (142) having a nitrogen concentration that is greater than 6×1021 atoms/cc. The second silicon nitride film (142) therefore increases the blocking effect against mobile ions that invade from a glass substrate (20) and makes the mobile ions less likely to accumulate at the interface with a channel layer (50). The first silicon nitride film (141) increases the insulation breakdown voltage of the gate insulation film (140).</p>
