METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH BURIED GATE

摘要

PURPOSE: A semiconductor device manufacturing method is provided to increase the margin of the contact forming process by enabling the following contact to act as the hard mask being self-aligned by forming a sealing film in protruded shape. CONSTITUTION: A semiconductor substrate(21) comprises a silicon substrate. An element separation layer(22) uses a spin-on insulation layer which has the excellent gap-fill property. The spin-on insulation layer comprises the silicon oxide film which is mainly made of the polysilazane. A pad layer(24) comprises the oxide film.