发明名称 |
An aluminum nitride ceramic and a member used for the production of semiconductors |
摘要 |
<p>The object of the present invention is to provide an aluminum nitride ceramics having a low volume resistivity at room temperature and a relatively low content of samarium. An aluminum nitride ceramics contains aluminum nitride as the main component and samarium in a content calculated as samarium oxide of 0.060 mole percent or lower. Aluminum nitride particles and samarium-aluminum composite oxide phase having a length of 7 micrometer or more are formed therein. Alternatively, an aluminum nitride ceramics contains aluminum nitride as the main component and samarium in a content calculated as samarium oxide of 0.060 mole percent or lower. Aluminum nitride particles having a mean grain diameter of 5 µm or more are formed therein.</p> |
申请公布号 |
EP1420004(B1) |
申请公布日期 |
2011.01.05 |
申请号 |
EP20030257159 |
申请日期 |
2003.11.13 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
TERATANI, NAOMI;KATSUDA, YUJI |
分类号 |
C04B35/581;C04B35/582;C04B35/645;H01L21/683 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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