发明名称 Ultra thin back-illuminated photodiode array structures and fabrication methods
摘要 <p>Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illumiated phtodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer (5) of the first conductivity type having a greater conductivity than the substrate; The arrays also have a matrix of regions (8) of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer (5) of the first conductivity type having a greater conductivity than the substrate, a plurality of regions (2) of the second conductivity type interspersed within the matrix of regions of the first conductiviy type and not extending to the layer of the first conductivity type on the second surface of the substrate, and a plurality of contacts (3,4) on the first surface for making electrical contact ot he matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type.</p>
申请公布号 EP2270873(A2) 申请公布日期 2011.01.05
申请号 EP20100075651 申请日期 2004.06.22
申请人 ARRAY OPTRONIX, INC. 发明人 HICKS, CHRIS;METZLER, RICHARD A.;KALATSKY, MARK;BARTLEY, EDDIE;TULBURE, DAN;GOUSHCHA, ALEXANDER O.
分类号 H01L31/0352;H01L27/144;H01L27/146;H01L27/148;H01L31/00;H01L31/105 主分类号 H01L31/0352
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