发明名称 |
Programming a normally single phase chalcogenide material for use as a memory of FPLA |
摘要 |
A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
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申请公布号 |
US7864567(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20080218122 |
申请日期 |
2008.07.11 |
申请人 |
OVONYX, INC. |
发明人 |
GORDON GEORGE A.;PARKINSON WARD D.;PETERS JOHN M.;LOWREY TYLER A.;OVSHINSKY STANFORD;WICKER GUY C.;KARPOV ILYA V.;KUO CHARLES C. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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