| 发明名称 |
Integrated circuit including silicide region to inhibit parasitic currents |
| 摘要 |
An integrated circuit is disclosed. One embodiment includes a first diode, a second diode, and a semiconductor line coupled to the first diode and the second diode. The line includes a first silicide region between the first diode and the second diode.
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| 申请公布号 |
US7863610(B2) |
申请公布日期 |
2011.01.04 |
| 申请号 |
US20070843044 |
申请日期 |
2007.08.22 |
| 申请人 |
QIMONDA NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RAJENDRAN BIPIN;HASAN.ZAIDI SHOAIB |
| 分类号 |
H01L29/10;H01L21/70 |
主分类号 |
H01L29/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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