发明名称 |
SOLID-STATE QUANTUM DOT DEVICES AND QUANTUM COMPUTING USING NANOSTRUCTURED LOGIC GATES |
摘要 |
Semiconductor dot devices include a multiple layer semiconductor structure having a substrate, a back gate electrode layer, a quantum well layer, a tunnel barrier layer between the quantum well layer and the back gate, and a barrier layer above the quantum well layer. Multiple electrode gates are formed on the multi-layer semiconductor with the gates spaced from each other by a region beneath which quantum dots may be defined. Appropriate voltages applied to the electrodes allow the development and appropriate positioning of the quantum dots, allowing a large number of quantum dots be formed in a series with appropriate coupling between the dots.
|
申请公布号 |
CA2438871(C) |
申请公布日期 |
2011.01.04 |
申请号 |
CA20022438871 |
申请日期 |
2002.03.08 |
申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
ERIKSSON, MARK A.;FRIESEN, MARK G.;JOYNT, ROBERT J.;LAGALLY, MAX G.;VAN DER WEIDE, DANIEL W.;RUGHEIMER, PAUL;SAVAGE, DONALD E. |
分类号 |
G06N99/00;H01L29/06;H01L29/66 |
主分类号 |
G06N99/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|