发明名称 High temperature transducer using SOI electronics
摘要 There is disclosed a high temperature pressure sensing system which includes a SOI Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI technology. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI technology and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.
申请公布号 US7861597(B2) 申请公布日期 2011.01.04
申请号 US20080291868 申请日期 2008.11.14
申请人 KULITE SEMICONDUCTOR PRODUCTS, INC. 发明人 KURTZ ANTHONY D.;LANDMANN WOLF S.
分类号 G01L9/00 主分类号 G01L9/00
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