发明名称 |
Transistor for active matrix display and a method for producing said transistor |
摘要 |
A transistor for active matrix display and a method for producing the transistor (1). The transistor (1) includes a microcrystalline silicon film (5) and an insulator (3). The crystalline fraction of the microcrystalline silicon film (5) is above 80%. According to the invention, the transistor (1) includes a plasma treated interface (4) located between the insulator (3) and the microcrystalline silicon film (5) so that the transistor (1) has a linear mobility equal or superior to 1.5 cm2V−1s−1, shows threshold voltage stability and wherein the microcrystalline silicon film (5) includes grains (6) whose size ranges between 10 nm and 400 nm. The invention concerns as well a display unit having a line-column matrix of pixels that are actively addressed, each pixel comprising at least a transistor as described above.
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申请公布号 |
US7863113(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20040544787 |
申请日期 |
2004.02.06 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;ECOLE POLYTECHNIQUE |
发明人 |
ROCA I CABARROCAS PERE;VANDERHAGHEN REGIS;DREVILLON BERNARD |
分类号 |
H01L21/00;H01L21/336;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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