| 摘要 |
<p>PURPOSE: A flash memory device and a method for manufacturing the same are provided to improve the integrity of the device by forming a third poly-silicon pattern functioning as a floating gate on both sidewalls of a first poly-silicon pattern. CONSTITUTION: A first oxide film pattern(210) is formed on a semiconductor substrate(100). A first poly-silicon pattern(220) is formed on the first oxide film pattern. A third poly-silicon pattern(300) is formed on the first oxide film pattern and on both sidewalls of the first poly-silicon pattern. The third oxide film pattern(310) is formed between the semiconductor substrate and the third poly-silicon pattern. A dopant region(50) is formed in the space of the third poly-silicon pattern.</p> |
