RECORDING METHOD OF NONVOLATILE MEMORY AND NONVOLATILE MEMORY

摘要

PURPOSE: A recording method and a nonvolatile memory thereof are provided to control the lifespan reduction of a storage device by recording the variation of resistance due to the magnetic or electrical structure change. CONSTITUTION: A plurality of information storage devices(41) has resistance variation due to a power part for the record of information. A first circuit records low resistance information to a predetermined voltage. A second circuit records high resistance information to an opposite polarity voltage compared to the predetermined voltage. A word line(43) is connected to the connection center tap of NMOSs(47,48) which are serially connected. A signal from a low decoder is inputted to a buffer circuit(49) and a NOT circuit(50).