METHOD FOR PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER

摘要

PURPOSE: A method for producing an epitaxially coated semiconductor wafer is provided to improve the nanotopography by preventing striation on the epitaxially coated semiconductor wafer. CONSTITUTION: An epitaxial layer is evaporated in one side of a semiconductor wafer. The epitaxial coating side of the semiconductor wafer is polished by using the polishing pad having fixed abrasive. The epitaxial coating side of the semiconductor wafer is CMP polished by using the polishing pad of the soft without the fixed abrasive.