PLASMA DEPOSITION APPARATUS AND FABRICATION METHOD OF THIN FILM USING THE SAME

摘要

PURPOSE: A plasma deposition apparatus and a film manufacturing method using the same are provided to enable the rapid deposition of active species on a substrate by controlling the behavior of SiH3(Disilane) active species. CONSTITUTION: A plasma deposition apparatus(100) comprises a reaction chamber(10) and first and second power supply units(60,70). The reaction chamber has first and second electrodes(20,30). The first power supply unit applies first radio frequency signals on one between the first and second electrodes as pulse form. The first power supply unit applies second radio frequency signals on one between the first and second electrodes as pulse form. The first and second radio frequency signals are applied on one between the electrodes according to pre-set deposition parameter.