| 摘要 |
In a manufacturing process of a solar cell comprising an amorphous silicon unit in which a p-type layer, an i-type layer, and an n-type layer are layered, in a step of forming the p-type layer, a doping concentration of a p-type dopant included in the p-type layer is increased as a distance from the i-type layer is increased, and in particular, a high-absorption amorphous silicon carbide layer and a low-absorption amorphous silicon carbide layer are consecutively formed while a state of plasma generation is maintained.
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