发明名称 |
METHOD FOR FABRICATING METAL GATE AND POLYSILICON RESISTOR AND RELATED POLYSILICON RESISTOR STRUCTURE |
摘要 |
An integrated method includes fabricating a metal gate and a polysilicon resistor structure. A photoresistor layer is defined by an SAB photo mask and covers a part of a polysilicon structure of the polysilicon resistor. When the gate conductor of a poly gate transistor is etched, the part of the polysilicon structure is protected by the patterned photoresistor layer. After the polysilicon resistor and the metal gate are formed. The polysilicon resistor still has sufficient resistance and includes two metal structures for electrical connection.
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申请公布号 |
US2010328022(A1) |
申请公布日期 |
2010.12.30 |
申请号 |
US20090490334 |
申请日期 |
2009.06.24 |
申请人 |
FAN CHENG-WEN;TSENG KUN-SZU;HSU CHE-HUA;TSENG CHIH-YU;LIANG VICTOR-CHIANG |
发明人 |
FAN CHENG-WEN;TSENG KUN-SZU;HSU CHE-HUA;TSENG CHIH-YU;LIANG VICTOR-CHIANG |
分类号 |
H01C1/012;H01L21/02;H01L21/336 |
主分类号 |
H01C1/012 |
代理机构 |
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代理人 |
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地址 |
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