发明名称 |
Transistor with Enhanced Channel Charge Inducing Material Layer and Threshold Voltage Control |
摘要 |
High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
|
申请公布号 |
US2010327322(A1) |
申请公布日期 |
2010.12.30 |
申请号 |
US20100823210 |
申请日期 |
2010.06.25 |
申请人 |
KUB FRANCIS J;HOBART KARL D;EDDY JR CHARLES R;MASTRO MICHAEL A;ANDERSON TRAVIS |
发明人 |
KUB FRANCIS J.;HOBART KARL D.;EDDY, JR. CHARLES R.;MASTRO MICHAEL A.;ANDERSON TRAVIS |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|