发明名称 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same
摘要 A positive resist composition for electron beam, X-ray or EUV includes a compound having a proton acceptor functional group and capable of producing an acid radical upon irradiation with an actinic ray or radiation to reduce or lose the acceptor property or to change the proton acceptor functional group to be acidic, wherein the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.
申请公布号 US7858289(B2) 申请公布日期 2010.12.28
申请号 US20080259056 申请日期 2008.10.27
申请人 FUJIFILM CORPORATION 发明人 YAMASHITA KATSUHIRO
分类号 G03F7/00;C07C381/00;G03F7/004;G03F7/029 主分类号 G03F7/00
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