发明名称 Semiconductor memory device and test method thereof
摘要 When a predetermined code is set to a mode register, a switching signal generating circuit is activated, and a switching signal TCLKE becomes at a high level. When the switching signal TCLKE becomes at a high level, input data supplied from a data input and output terminal DQ is used as an internal clock ICLK. Accordingly, during a test in a wafer state, a clock signal can be received from the data input and output terminal DQ, even when a clock terminal, an address terminal, and a command terminal are connected in common to plural semiconductor memory devices. Therefore, a code for artificially performing a fine adjustment of a reference voltage can be individually supplied for each chip.
申请公布号 US7859938(B2) 申请公布日期 2010.12.28
申请号 US20080233278 申请日期 2008.09.18
申请人 ELPIDA MEMORY, INC. 发明人 MATSUBARA YASUSHI
分类号 G11C8/00 主分类号 G11C8/00
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