发明名称 |
Interconnect structure and method of fabricating the same |
摘要 |
A method of fabricating an interconnect structure is described. A substrate is provided. A patterned interfacial metallic layer is formed on the substrate. An amorphous carbon insulating layer or a carbon-based insulating layer is formed covering the substrate and the interfacial metallic layer. A conductive carbon line or plug is formed in the amorphous carbon or carbon-based insulating layer electrically connected with the interfacial metallic layer. An interconnect structure is also described, including a substrate, a patterned interfacial metallic layer on the substrate, an amorphous carbon insulating layer or a carbon-based insulating layer on the substrate, and a conductive carbon line or plug disposed in the amorphous carbon or carbon-based insulating layer and electrically connected with the interfacial metallic layer.
|
申请公布号 |
US7858147(B2) |
申请公布日期 |
2010.12.28 |
申请号 |
US20080229233 |
申请日期 |
2008.08.20 |
申请人 |
NATIONAL TSING HUA UNIVERSITY |
发明人 |
WU YU-TSUNG;HUANG JEN-HONG;TSAI CHUNG-MIN;SU HUAN-CHIEH;YEW TRI-RUNG |
分类号 |
B05D5/12;B05D3/00;C23C14/00;C23C16/00 |
主分类号 |
B05D5/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|