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发明名称
Semiconductor device
摘要
A dummy transistor and a field effect transistor are arranged in a second direction. The dummy transistor is located at least at one end in a second direction.
申请公布号
US7859038(B2)
申请公布日期
2010.12.28
申请号
US20080335964
申请日期
2008.12.16
申请人
ELPIDA MEMORY, INC.
发明人
KADOYA TOMOHIRO
分类号
H01L27/108
主分类号
H01L27/108
代理机构
代理人
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