发明名称 |
Semiconductor device having a SRAM with a substrate contact and method for fabricating the same |
摘要 |
An isolation insulating film is formed so that an active region of a first access transistor and a substrate contact region can be integrated with each other in a plan view. A dummy gate electrode is formed on the semiconductor substrate between the active region of the first access transistor and the substrate contact region. The dummy gate electrode is electrically connected to a P-type impurity region of the substrate contact region.
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申请公布号 |
US7859058(B2) |
申请公布日期 |
2010.12.28 |
申请号 |
US20060480909 |
申请日期 |
2006.07.06 |
申请人 |
PANASONIC CORPORATION |
发明人 |
NAKAMURA MASAYUKI;ISHIKURA SATOSHI;YAMADA TAKAYUKI |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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